Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers

被引：87

作者：

Zhang, JP ^{[1
]}

Yang, J

Simin, G

Shatalov, M

Khan, MA

Shur, MS

Gaska, R

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Sensor Elect Technol Inc, Latham, NY 12110 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 17期

关键词：

D O I：

10.1063/1.1319531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well (MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures. (C) 2000 American Institute of Physics. [S0003-6951(00)00743-9].

引用

页码：2668 / 2670

页数：3

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