Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

被引：599

作者：

Takeuchi, T

Wetzel, C

Yamaguchi, S

Sakai, H

Amano, H

Akasaki, I

Kaneko, Y

Nakagawa, S

Yamaoka, Y

Yamada, N

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Hewlett Packard Labs, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.122247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have identified piezoelectric fields in strained GaInN/GaN quantum well p-i-n structures using the quantum-confined Stark effect. The photoluminescence peak of the quantum wells showed a blueshift with increasing applied reverse voltages. This blueshift is due to the cancellation of the piezoelectric field by the reverse bias field. We determined that the piezoelectric field points from the growth surface to the substrate and its magnitude is 1.2 MV/cm for Ga0.84In0.16N/GaN quantum wells on saphire substrate. In addition, from the direction of the field, the growth orientation of our nitride epilayers can be determined to be (0001), corresponding to the Ga face. (C) 1998 American Institute of Physics.

引用

页码：1691 / 1693

页数：3

共 17 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].