HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition

被引：59

作者：

Chen, P. T. ^{[1
]}

Sun, Y. ^{[2
]}

Kim, E. ^{[1
]}

McIntyre, P. C. ^{[1
]}

Tsai, W. ^{[3
]}

Garner, M. ^{[3
]}

Pianetta, P. ^{[2
]}

Nishi, Y. ^{[4
]}

Chui, C. O. ^{[5
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Linear Accelerator Ctr, Stanford Synchrotron Radiat Lab, Stanford, CA 94305 USA

[3] Intel Corp, Santa Clara, CA 95052 USA

[4] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[5] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 03期

关键词：

D O I：

10.1063/1.2838471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH4)(2)S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As2O3 formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out diffusion into the hafnia film were observed after a 450 degrees C postdeposition anneal and may be the origins for the electrically active defects. Transmission electron microscopy cross section images showed thicker HfO2 films for a given precursor exposure on sulfur treated GaAs versus the nontreated sample. In addition, the valence-band and the conduction-band offsets at the HfO2/GaAs interface were deduced to be 3.18 eV and a range of 0.87-1.36 eV, respectively. It appears that HCl+(NH4)(2)S treatments provide a superior chemical passivation for GaAs and initial surface for atomic layer deposition. (c) 2008 American Institute of Physics.

引用

页数：6

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