Impact of E-E scattering to the hot carrier degradation of deep submicron NMOSFET's

The hot carrier degradation of short channel NMOSFET's (L-EFF = 0.07-0.10 mu m) stressed at 2.0 V less than or equal to V-DS less than or equal to 2.9 V and a wide V-GS range is shown NOT to obey the classic hot carrier "lucky electron model." In the low and mid VGS range, the degradation behavior is better described by an effective electron temperatures model proposed here, which takes e-e scattering effects into account, In the high V-GS regime, a further lifetime reduction can be qualitatively explained within this model by the increase in electron concentration at the Si-SiO2 interface near the drain region.