Encapsulation of Cu(InGa)Se2 solar cell with Al2O3 thin-film moisture barrier grown by atomic layer deposition

被引：51

作者：

Carcia, P. F. ^{[1
]}

McLean, R. S. ^{[1
]}

Hegedus, Steven ^{[2
]}

机构：

[1] DuPont Res & Dev, Expt Stn, Wilmington, DE 19880 USA

[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 12期

关键词：

CIGS; Encapsulation; Moisture barrier; Atomic layer deposition; DAMP-HEAT;

D O I：

10.1016/j.solmat.2010.08.021

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We compared the moisture sensitivity of a Cu(InGa)Se-2 (CIGS) photovoltaic cell protected by 55 nm thick Al2O3, grown by atomic layer deposition (ALD), with equivalent CIGS cells protected with a glass or a polyester lid. Aging studies for more than 1000 h at 85 degrees C/85% relative humidity with simulated solar illumination showed that the ALD Al2O3 thin-film barrier provided superior moisture protection for the CIGS cell, i.e. no reduction in open circuit voltage or fill factor occurred, compared to cells protected with a glass or plastic lid. We concluded that a moisture barrier grown by ALD could have broad applicability as a strategy for extending the lifetime of flexible CIGS cells. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2375 / 2378

页数：4

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