InGaAs/GaAs quantum nanostructure fabrication on GaAs (111)A vicinal substrates by atomic layer epitaxy

InGaAs/GaAs quantum wire (QWR) and dots were fabricated on GaAs (111)A vicinal substrates by the atomic layer epitaxy (ALE) technique. In0.25Ga0.75As QWR structures were formed on metalorganic vapor phase epitaxy grown homogeneous multiatomic height steps on GaAs (111)A vicinal substrates misoriented toward the [11(2) over bar] direction. In photoluminescence measurement only one spectrum, which shows strong polarization dependence, was observed. The result and its narrow full. width at half maximum of 10 meV imply that the elimination of the wetting layer and excellent size uniformity are realized by the ALE technique. Spontaneous alignment of InGaAs quantum dots was also achieved by the ALE method. Boxlike shaped dot arrays of which height is restricted by the step height indicate that the ALE growth on the(lll)A vicinal surface has an effect on not only the arrangement but also on the size and shape control of quantum nanostructures. (C) 1998 American Institute of Physics.