Quantum wire structures incorporating (GaAs)(m)(GaP)(n) short-period superlattice fabricated by atomic layer epitaxy

被引：7

作者：

Isshiki, H

Aoyagi, Y

Sugano, T

机构：

[1] Frontier Research Program, Inst. of Phys. and Chemical Research, Wako-shi, Saitama 351-01

来源：

APPLIED SURFACE SCIENCE | 1997年 / 112卷

基金：

日本科学技术振兴机构;

关键词：

quantum wire; superlattice; atomic layer epitaxy; selective growth; PL (photoluminescence); TEM (transmission electron microscopy);

D O I：

10.1016/S0169-4332(96)00987-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Lateral confined systems of (GaAs)(m)(GaP)(n) short-period superlattice (SPSL) fabricated by using atomic layer epitaxy (ALE), for composition control in quantum nano-structures, are demonstrated. (GaAs)(m)(GaP)(n) SPSL were grown on V-grooved GaAs substrates by the localized-ALE on nanometer scale. The lateral confined systems composed of well-defined (GaAs)(m)(GaP)(n) SPSL have been confirmed via transmission electron microscopy (TEM) and photoluminescence (PL) measurements. Also GaAs/(GaAs)(m)(GaP)(n)-SPSL quantum wire structures were fabricated by ALE growth, and composition control in the structures was successfully realized for the first time.

引用

页码：122 / 126

页数：5

共 13 条

[1]

DOI A, 1986, APPL PHYS LETT, V48, P1787, DOI 10.1063/1.96787

[2] LATERAL QUANTUM-WELL WIRES FABRICATED BY SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].