Ultraviolet raman study of A1(LO) and E2 phonons in InxGa1-xN alloys

被引：53

作者：

Alexson, D ^{[1
]}

Bergman, L

Nemanich, RJ

Dutta, M

Stroscio, MA

Parker, CA

Bedair, SM

El-Masry, NA

Adar, F

机构：

[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

[2] USA, Res Off, Res Triangle Pk, NC 27709 USA

[3] Jobin Yvon HORIBA Grp, Edison, NJ 08820 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.1330760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on ultraviolet Raman spectroscopy of InxGa1-xN thin films grown on sapphire by metal-organic chemical vapor deposition. The A(1)(LO) and E-2 phonon mode behavior was investigated over a large compositional range (0 <x <0.50). Compelling evidence is presented for one-mode behavior for the A(1)(LO) phonon, and data suggestive of two-mode behavior are presented for the E-2 phonon. (C) 2001 American Institute of Physics.

引用

页码：798 / 800

页数：3

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