The electronic structure, metastability and transport properties of optimized amorphous silicon-germanium alloys

被引：1

作者：

Chen, CC ^{[1
]}

Lubianiker, Y ^{[1
]}

Cohen, JD ^{[1
]}

Yang, JC ^{[1
]}

Guha, S ^{[1
]}

Wickboldt, P ^{[1
]}

Paul, W ^{[1
]}

机构：

[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-769

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have carried out a comprehensive study of the electronic properties of two series of optimized a-Si1-xGex:H alloys fabricated at United Solar Systems Corporation ("Uni-Solar") and Harvard University, encompassing the composition range 0.2 less than or equal to x less than or equal to 1.0. Both series of samples exhibit deep defect densities that obey quite accurately the spontaneous bond-breaking model proposed by M. Stutzmann which, by considering how the defect formation energy varies with the position of Fermi energy, we have been able to extend to doped samples. We have also extended our studies to include measurements of ambipolar diffusion lengths and the effects of light-induced degradation, and thus have been able to demonstrate a direct relation between these transport properties and the measured defect levels before and after degradation.

引用

页码：769 / 774

页数：6

共 22 条

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[Anonymous], UNPUB

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