Surface electronic properties of undoped InAlN alloys

被引：17

作者：

King, P. D. C. ^{[1
]}

Veal, T. D. ^{[1
]}

Adikimenakis, A. ^{[2
]}

Lu, Hai ^{[3
]}

Bailey, L. R. ^{[1
]}

Iliopoulos, E. ^{[2
]}

Georgakilas, A. ^{[2
]}

Schaff, W. J. ^{[3
]}

McConville, C. F. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Univ Crete, Dept Phys, Microelect Res Grp, Iraklion, Greece

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2913765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The variation in surface electronic properties of undoped c-plane In(x)Al(1-x)N alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed. (C) 2008 American Institute of Physics.

引用

页数：3

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