MECHANISM OF SCHOTTKY-BARRIER FORMATION - THE ROLE OF AMPHOTERIC NATIVE DEFECTS

被引：102

作者：

WALUKIEWICZ, W

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1062 / 1067

页数：6

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[1] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS
ALLEN, RE
DOW, JD
[J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426
[2] AUKERMAN LM, 1973, SEMICONDUCT SEMIMET, V4, P343
[3] GALLIUM VACANCY AND EL-2 IN GAAS - REPLY
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (11) : 1214 - 1214
[4] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330
[5] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7346 - 7348
[6] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343
[7] GALLIUM VACANCY AND EL-2 IN GAAS
BARYAM, Y
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (11) : 1213 - 1213
[8] FERMI LEVEL PINNING AND CHEMICAL INTERACTIONS AT METAL-INXGA1-XAS(100) INTERFACES
BRILLSON, LJ
SLADE, ML
VITURRO, RE
KELLY, MK
TACHE, N
MARGARITONDO, G
WOODALL, JM
KIRCHNER, PD
PETTIT, GD
WRIGHT, SL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 919 - 923
[9] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY
BRILLSON, LJ
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (04) : 260 - 263
[10] RELATION BETWEEN THE COMMON ANION RULE AND THE DEFECT MODEL OF SCHOTTKY-BARRIER FORMATION
DAW, MS
SMITH, DL
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (03) : 205 - 208

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