Dynamics of photoluminescence in GaInNAs saturable absorber mirrors

被引：11

作者：

Harkonen, A

Jouhti, T

Tkachenko, NV

Lemmetyinen, H

Ryvkin, B

Okhotnikov, OG

Sajavaara, T

Keinonen, J

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[2] Tampere Univ Technol, Inst Mat Chem, FIN-33101 Tampere, Finland

[3] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 77卷 / 07期

关键词：

D O I：

10.1007/s00339-003-2240-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Femtosecond time-resolved photoluminescence experiments have been used to study the nonlinear dynamics of novel monolithic GaInNAs/GaAs semiconductor saturable absorber mirrors at 1.08 and 1.55 mum. The mirror structures were grown using molecular-beam epitaxy followed by Ni-ion implantation and thermal C, annealing. We present photoluminescence measurements showing the critical role of post-growth processing on the response time of GaInNAs/GaAs absorber mirrors.

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收藏

页码：861 / 863

页数：3

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