p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires

被引：90

作者：

Lee, JunSeok ^{[2
]}

Cha, SeungNam ^{[1
]}

Kim, JongMin ^{[1
]}

Nam, HyeWon ^{[2
]}

Lee, SangHyo ^{[2
]}

Ko, WonBae ^{[2
]}

Wang, Kang L. ^{[3
]}

Park, JeaGun ^{[4
]}

Hong, JinPyo ^{[2
]}

机构：

[1] Samsung Adv Inst Technol, Yongin 446712, South Korea

[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[4] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 36期

关键词：

TRANSISTORS; TRANSITION;

D O I：

10.1002/adma.201101376

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires p-type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurs because of thermally induced migration due to post-annealing in the presence of oxygen. The stable formation of p-type ZnO:Li NWs is revealed using a NW field-effect transistor and a simple n-type ZnO thin film/p-type annealed ZnO:Li NW homojunction diode.

引用

收藏

页码：4183 / +

页数：6

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