Mapping and statistics of ferroelectric domain boundary angles and types

被引：14

作者：

Desmarais, Joseph ^{[1
]}

Ihlefeld, Jon F. ^{[2
]}

Heeg, Tassilo ^{[3
]}

Schubert, Juergen ^{[4
,5
]}

Schlom, Darrell G. ^{[3
,6
]}

Huey, Bryan D. ^{[1
]}

机构：

[1] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[4] Res Ctr Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany

[5] Res Ctr Julich, JARAFIT, D-52425 Julich, Germany

[6] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 16期

关键词：

bismuth compounds; dielectric polarisation; electric domain walls; epitaxial layers; ferroelectric materials; ferroelectric thin films; multiferroics; scanning probe microscopy; PIEZORESPONSE FORCE MICROSCOPY; THIN-FILMS;

D O I：

10.1063/1.3643155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric domain orientations have been mapped using piezo-force microscopy, allowing the calculation and statistical analysis of interfacial polarization angles, the head-to-tail or head-to-head configuration, and any cross-coupling terms. Within 1 mu m(2) of an epitaxial (001)(p)-oriented BiFeO(3) film, there are >40 mu m of linear domain boundary based on over 500 interfaces. 71 degrees domain walls dominate the interfacial polarization angles, with a 2:1 preference for uncharged head-to-tail versus charged head-to-head boundary types. This mapping technique offers a unique perspective on domain boundary distributions, important for ferroelectric and multiferroic applications where domain wall parameters are critical. (C) 2011 American Institute of Physics. [doi:10.1063/1.3643155]

引用

页数：3

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