Optical band gap of BiFeO3 grown by molecular-beam epitaxy

被引：344

作者：

Ihlefeld, J. F. ^{[1
,2
]}

Podraza, N. J. ^{[1
]}

Liu, Z. K. ^{[1
]}

Rai, R. C. ^{[3
]}

Xu, X. ^{[3
]}

Heeg, T.

Chen, Y. B. ^{[5
]}

Li, J.

Collins, R. W. ^{[6
]}

Musfeldt, J. L. ^{[3
]}

Pan, X. Q. ^{[5
]}

Schubert, J. ^{[4
]}

Ramesh, R. ^{[2
,7
]}

Schlom, D. G. ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA

[4] Res Ctr Julich, Inst Bio & Nano Sysy IBN1 IT, D-52425 Julich, Germany

[5] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48019 USA

[6] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

[7] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 14期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2901160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BiFeO(3) thin films have been deposited on (001) SrTiO(3) substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO(3) films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with omega rocking curve full width at half maximum values as narrow as 29 arc sec (0.008 degrees). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO(3) films. (C) 2008 American Institute of Physics.

引用

页数：3

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