Ferroelectric domain structures of epitaxial (001) BiFeO3 thin films

被引：71

作者：

Chen, Y. B.

Katz, M. B.

Pan, X. Q. ^{[1
]}

Das, R. R.

Kim, D. M.

Baek, S. H.

Eom, C. B.

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2472092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric domain structures of epitaxial BiFeO3 thin films on miscut (001) SrTiO3 substrates have been studied by transmission electron microscopy. BiFeO3 on 0.8 degrees miscut substrates are composed of both 109 degrees and 71 degrees domains; in contrast, only 71 degrees stripe domains are observed in BiFeO3 on 4 degrees miscut (001) SrTiO3 substrates. The domain width in BiFeO3 on 4 degrees miscut substrates increases as film thickness increases due to a reduction in domain wall energy. The domain configurations of BiFeO3 thin films affect their ferroelectric switching behavior due to the pinning at the junctions between 109 degrees and 71 degrees domain walls. (c) 2007 American Institute of Physics.

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页数：3

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