Imaging the strain fields resulting from laser micromachining of semiconductors

被引：29

作者：

Borowiec, A ^{[1
]}

Bruce, DM

Cassidy, DT

Haugen, HK

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4M1, Canada

[2] McMaster Univ, Dept Phys & Astron, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada

[3] McMaster Univ, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4M1, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 02期

关键词：

POLARIZATION-RESOLVED PHOTOLUMINESCENCE; FEMTOSECOND LASER; ABLATION; STRESSES; SILICON; PULSES;

D O I：

10.1063/1.1591241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The residual strain fields resulting from laser micromachining of grooves in indium phosphide with femtosecond and nanosecond light pulses are analyzed using a spatially resolved degree-of-polarization photoluminescence technique. Significant differences in the geometry of the strain patterns are observed in grooves machined by femtosecond and nanosecond pulses. For the specific conditions investigated, the sign of the degree of polarization signal is opposite in the two cases indicating that areas under tension in femtosecond machined samples are under compression in nanosecond machined samples and visa versa. The experimental data are compared with results from a finite element model. (C) 2003 American Institute of Physics.

引用

页码：225 / 227

页数：3

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