Defects in solid phase and laser crystallised polysilicon thin film transistors

Comparisons of polycrystalline silicon materials are made using both density of states measurements made on thin films transistors and transmission and scanning electron microscopy micrographs. We show that in solid phase crystallised materials, in-grain defects control electrical properties whereas in laser crystallised materials, it is grain boundaries. (C) 1998 Elsevier Science B.V. All rights reserved.