Anisotropic shape of self-assembled InAs quantum dots: Refraction effect on spot shape of reflection high-energy electron diffraction

被引:43
作者
Hanada, T [1 ]
Koo, BH [1 ]
Totsuka, H [1 ]
Yao, T [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 16期
关键词
D O I
10.1103/PhysRevB.64.165307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A significant role of refraction effect on reflection high-energy electron diffraction (RHEED) from nanostructures is demonstrated. It was found that the chevron-shape spots in RHEED patterns from self-assembled InAs/GaAs(001) and InAs/InAlAs/InP(001) quantum dots at [1 (1) over bar0] azimuth are well reproduced by kinematical calculations taking into account the refraction of electron beam at the curved surfaces of the dots. The dots must have (1 (1) over bar0) cross sections steeper than (110) cross sections and consequently extend along [1 (1) over bar0] since the refraction effects, considerable only at glancing incidence and departure, are invisible at [110] azimuth.
引用
收藏
页数:6
相关论文
共 23 条
[1]  
Barabasi AL, 1997, APPL PHYS LETT, V70, P2565, DOI 10.1063/1.118920
[2]   Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) [J].
Brault, J ;
Gendry, M ;
Grenet, G ;
Hollinger, G ;
Desieres, Y ;
Benyattou, T .
APPLIED PHYSICS LETTERS, 1998, 73 (20) :2932-2934
[3]   RELATIVISTIC HARTREE-FOCK X-RAY AND ELECTRON SCATTERING FACTORS [J].
DOYLE, PA ;
TURNER, PS .
ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :390-&
[4]   Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures [J].
González, L ;
García, JM ;
García, R ;
Briones, F ;
Martínez-Pastor, J ;
Ballesteros, C .
APPLIED PHYSICS LETTERS, 2000, 76 (09) :1104-1106
[5]   Strain relaxation of self-assembled InAs/GaAs(001) quantum dots observed by reflection high-energy electron diffraction [J].
Hanada, T ;
Totsuka, H ;
Yao, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3B) :1878-1881
[6]   Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope [J].
Hasegawa, Y ;
Kiyama, H ;
Xue, QK ;
Sakurai, T .
APPLIED PHYSICS LETTERS, 1998, 72 (18) :2265-2267
[7]   HETEROEPITAXIAL GROWTH OF STRAINED AND RELAXED LAYERS OF INAS ON INP INVESTIGATED BY RHEED AND HRTEM [J].
HOLLINGER, G ;
GENDRY, M ;
DUVAULT, JL ;
SANTINELLI, C ;
FERRET, P ;
MIOSSI, C ;
PITAVAL, M .
APPLIED SURFACE SCIENCE, 1992, 56-8 (pt B) :665-671
[8]   Stillinger-Weber potentials for III-V compound semiconductors and their application to the critical thickness calculation for InAs/GaAs [J].
Ichimura, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 153 (02) :431-437
[9]   Reflection high-energy electron diffraction scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation [J].
Joyce, BA ;
Jones, TS ;
Belk, JG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2373-2380
[10]   Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying [J].
Joyce, PB ;
Krzyzewski, TJ ;
Bell, GR ;
Joyce, BA ;
Jones, TS .
PHYSICAL REVIEW B, 1998, 58 (24) :15981-15984