Strain dependent resistance in chemical vapor deposition grown graphene

被引：222

作者：

Fu, Xue-Wen ^{[1
]}

Liao, Zhi-Min ^{[1
]}

Zhou, Jian-Xin ^{[2
]}

Zhou, Yang-Bo ^{[1
]}

Wu, Han-Chun ^{[3
,4
]}

Zhang, Rui ^{[1
]}

Jing, Guangyin ^{[5
]}

Xu, Jun ^{[1
]}

Wu, Xiaosong ^{[1
]}

Guo, Wanlin ^{[2
]}

Yu, Dapeng ^{[1
]}

机构：

[1] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Nanjing Univ Aeronaut & Astronaut, Inst Nano Sci, Nanjing 210016, Peoples R China

[3] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[4] Trinity Coll Dublin, CRANN, Dublin 2, Ireland

[5] Northwest Univ, Dept Phys, Xian 710069, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 21期

关键词：

chemical vapour deposition; electric admittance; graphene; plastic deformation; MONOLAYER;

D O I：

10.1063/1.3663969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain dependence of conductance of monolayer graphene has been studied experimentally here. The results illustrate the notable transitions: the slight increase, the dramatic decrease, and the sudden dropping of the conductance by gradually increasing the uniaxial strain. The graphene conductance behaves reversibly by tuning of the elastic tensile strain up to 4.5%, while it fails to recover after the plastic deformation at 5%. The change in conductance due to strain is surprisingly high, which indicates the potential applications in electromechanical devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3663969]

引用

页数：3

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