Frontier of transparent oxide semiconductors

被引：125

作者：

Ohta, H

Nomura, K

Hiramatsu, H

Ueda, K

Kamiya, T

Hirano, M

Hosono, H

机构：

[1] Japan Sci & Technol Corp, ERATO, Transplant Electroact Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 12期

关键词：

transparent oxide semiconductors (TOSs); transparent oxide optoelectronics; novel p-type transparent oxide semiconductor; deep-UV transparent conductive oxide; reactive solid-phase epitaxy (R-SPE); transparent field-effect-transistor (TFET); p-n heterojunction UV-LED;

D O I：

10.1016/S0038-1101(03)00208-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent advancements of transparent oxide semiconductors (TOS) toward new frontiers of "oxide electronics" are reviewed based on our efforts, categorized as "novel functional materials", "heteroepitaxial growth techniques", and "device fabrications". Topics focused in this paper are: (1) highly conductive ITO thin film with atomically flat surface, (2) p-type TOS material ZnRh2O4, (3) deep-ultraviolet (DUV) transparent conductive oxide beta-Ga2O3 thin film, (4) electrochromic oxyfuolide NbO2F, (5) single-crystalline films of InGaO3(ZnO)(m) grown by reactive solid-phase epitaxy, (6) p-type semiconductor LaCuOS/Se epitaxial films capable of emitting UV- and purple-light, (7) p-n homojunction based on bipolar CuInO2, (8) transparent FET based on single-crystalline InGaO3(ZnO)(5) films, and (9) UV-light emitting diode based on p-n heterojunction. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：2261 / 2267

页数：7

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