Radiation effects and hardening of MOS technology: Devices and circuits

被引：231

作者：

Hughes, HL ^{[1
]}

Benedetto, JM

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] MRC Microelect, Colorado Springs, CO 80919 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 03期

关键词：

aerospace testing; CMOS integrated circuits; hydrogen; magnetic resonance; MOS devices; power MOSFETs; radiation effects; radiation hardening;

D O I：

10.1109/TNS.2003.812928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total ionizing dose radiation effects on the electrical properties of metal-oxide-semiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution. These effects are caused by radiation-induced charge buildup in oxide and interfacial regions. This paper presents an overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation.

引用

收藏

页码：500 / 521

页数：22

相关论文

共 407 条

[1] EFFECTS OF X-RAY-IRRADIATION ON GIDL IN MOSFETS [J].

ACOVIC, A ;

HSU, CCH ;

HSIA, LC ;

BALASINSKI, A ;

MA, TP .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) :189-191

[2] FIELD OXIDE INVERSION EFFECTS IN IRRADIATED CMOS DEVICES [J].

ADAMS, JR ;

COPPAGE, FN .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1604-1609

[3] RADIATION HARDENED FIELD OXIDE [J].

ADAMS, JR ;

DAWES, WR ;

SANDERS, TJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2099-2101

[4] Pressure dependence of Si/SiO2 degradation suppression by helium [J].

Afanas'ev, VV ;

Stesmans, A .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (10) :7338-7341

[5] Positive charging of thermal SiO2 layers:: hole trapping versus proton trapping [J].

Afanas'ev, VV ;

Adriaenssens, GJ ;

Stesmans, A .

MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) :85-88

[6] Proton nature of radiation-induced positive charge in SiO2 layers on Si [J].

Afanas'ev, VV ;

Stesmans, A .

EUROPHYSICS LETTERS, 2001, 53 (02) :233-239

[7] Oxygen vacancies in SiO2, layers an Si produced at high temperature [J].

Afanas'ev, VV ;

Stesmans, A ;

Revesz, AG ;

Hughes, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (09) :3157-3160

[8] SIO2 HOLE TRAPS WITH SMALL CROSS-SECTION [J].

AFANAS'EV, VV ;

DENIJS, JMM ;

BALK, P .

APPLIED PHYSICS LETTERS, 1995, 66 (14) :1738-1740

[9] Charge state of paramagnetic E′ centre in thermal SiO2 layers on silicon [J].

Afanas'ev, VV ;

Stesmans, A .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (10) :2285-2290

[10] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J].

AITKEN, JM ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1196-1198

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