Demonstration of (ℷ ≈ 11.5-μm) GaAs-based quantum cascade laser operating on a peltier cooled element

被引：12

作者：

Page, H ^{[1
]}

Robertson, A ^{[1
]}

Sirtori, C ^{[1
]}

Becker, C ^{[1
]}

Glastre, G ^{[1
]}

Nagle, J ^{[1
]}

机构：

[1] Thomson CSF, Cent Res Lab, F-91404 Orsay, France

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 06期

关键词：

epi-side down mounting; mid-infrared; semiconductor device heat-sinking; unipolar semiconductor laser;

D O I：

10.1109/68.924018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate an average power of 2 mW at lambda approximate to 11.5 mum and 233 K, for a GaAs-based quantum cascade laser mounted on a Peltier cooler Furthermore, a maximum operating temperature of 285 K has also been demonstrated. These results are attributed to the excellent intrinsic thermal characteristics of these lasers and good heat management, achieved through the structural design and epi-side down mounting. Measurements show a thermal resistance of 6.7 K/W at 233 K, in good agreement with our models.

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收藏

页码：556 / 558

页数：3

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