New optoelectronic tip design for ultrafast scanning tunneling microscopy

被引:23
作者
Groeneveld, RHM
Rasing, T
Kaufmann, LMF
Smalbrugge, E
Wolter, JH
Melloch, MR
vanKempen, H
机构
[1] EINDHOVEN UNIV TECHNOL,ELECTR DEVICES GRP,COBRA INTERUNIV RES INST,5600 MB EINDHOVEN,NETHERLANDS
[2] EINDHOVEN UNIV TECHNOL,SEMICOND PHYS GRP,COBRA INTERUNIV RES INST,5600 MB EINDHOVEN,NETHERLANDS
[3] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期
关键词
D O I
10.1116/1.589162
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed a scanning tunneling microscope using an optoelectronic switch that gates the tunneling tip current, The switch is fabricated within 30 mu m from the tip by photolithography and an accurate cleavage method. We demonstrate this approach by detecting picosecond electrical transients on a coplanar stripline. We have investigated the signal dependence on contact resistance and found significant differences when the tip is brought from low-ohmic contact into the tunneling regime. In this regime, the THz signal amplitude was found to depend linearly on the tunnel conductance, and disappeared when the tip was retracted. (C) 1996 American Vacuum Society.
引用
收藏
页码:861 / 863
页数:3
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