Hybrid conjugated polymer solar cells using patterned GaAs nanopillars

被引：44

作者：

Mariani, Giacomo ^{[1
]}

Laghumavarapu, Ramesh B. ^{[1
]}

de Villers, Bertrand Tremolet ^{[2
]}

Shapiro, Joshua ^{[1
]}

Senanayake, Pradeep ^{[1
]}

Lin, Andrew ^{[1
]}

Schwartz, Benjamin J. ^{[2
,3
]}

Huffaker, Diana L. ^{[1
,3
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 01期

基金：

美国国家科学基金会;

关键词：

conducting polymers; current density; dark conductivity; gallium arsenide; III-V semiconductors; leakage currents; MOCVD; MOCVD coatings; nanostructured materials; organic-inorganic hybrid materials; passivation; solar cells; SEMICONDUCTORS; PASSIVATION; NANOWIRES; SURFACE;

D O I：

10.1063/1.3459961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we study hybrid solar cells based on poly(3-hexylthiophene)-coated GaAs nanopillars grown on a patterned GaAs substrate using selective-area metal organic chemical vapor deposition. The hybrid solar cells show extremely low leakage currents (I congruent to 45 nA @-1V) under dark conditions and an open circuit voltage, short circuit current density, and fill factor of 0.2 V, 8.7 mA/cm(2), and 32%, respectively, giving a power conversion efficiency of eta=0.6% under AM 1.5 G illumination. Surface passivation of the GaAs results in further improvement, yielding eta=1.44% under AM 1.5 G illumination. External quantum efficiency measurements of these polymer/inorganic solar cells are also presented. (C) 2010 American Institute of Physics. [doi:10.1063/1.3459961]

引用

页数：3

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