Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

被引：97

作者：

Kim, Tae-Wook ^{[1
]}

Gao, Yan ^{[1
,2
]}

Acton, Orb ^{[1
]}

Yip, Hin-Lap ^{[1
]}

Ma, Hong ^{[1
]}

Chen, Hongzheng ^{[2
]}

Jen, Alex K. -Y. ^{[1
,3
]}

机构：

[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

[2] Zhejiang Univ, Zhejiang California Int Nanosyst Inst, Hangzhou 310027, Peoples R China

[3] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

organic compounds; photodiodes; GOLD NANOPARTICLES; FILMS;

D O I：

10.1063/1.3464292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (I-ON/I-OFF=similar to 10(2)) for 10(4) s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464292].

引用

页数：3

共 24 条

[1] Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret [J].

Baeg, Kang-Jun ;

Noh, Yong-Young ;

Ghim, Jieun ;

Kang, Seok-Ju ;

Lee, Hyemi ;

Kim, Dong-Yu .

ADVANCED MATERIALS, 2006, 18 (23) :3179-+

[2] Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory [J].

Baeg, Kang-Jun ;

Noh, Yong-Young ;

Sirringhaus, Henning ;

Kim, Dong-Yu .

ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (02) :224-230

[3] Evaluation of solution-processed reduced graphene oxide films as transparent conductors [J].

Becerril, Hdctor A. ;

Mao, Jie ;

Liu, Zunfeng ;

Stoltenberg, Randall M. ;

Bao, Zhenan ;

Chen, Yongsheng .

ACS NANO, 2008, 2 (03) :463-470

[4] Defect Scattering in Graphene [J].

Chen, Jian-Hao ;

Cullen, W. G. ;

Jang, C. ;

Fuhrer, M. S. ;

Williams, E. D. .

PHYSICAL REVIEW LETTERS, 2009, 102 (23)

[5] Langmuir-Blodgett Assembly of Graphite Oxide Single Layers [J].

Cote, Laura J. ;

Kim, Franklin ;

Huang, Jiaxing .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (03) :1043-1049

[6] Mechanical force sensors using organic thin-film transistors -: art. no. 093708 [J].

Darlinski, G ;

Böttger, U ;

Waser, R ;

Klauk, H ;

Halik, M ;

Zschieschang, U ;

Schmid, G ;

Dehm, C .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[7] Chemically Derived Graphene Oxide: Towards Large-Area Thin-Film Electronics and Optoelectronics [J].

Eda, Goki ;

Chhowalla, Manish .

ADVANCED MATERIALS, 2010, 22 (22) :2392-2415

[8] Electronic transport properties of individual chemically reduced graphene oxide sheets [J].

Gomez-Navarro, Cristina ;

Weitz, R. Thomas ;

Bittner, Alexander M. ;

Scolari, Matteo ;

Mews, Alf ;

Burghard, Marko ;

Kern, Klaus .

NANO LETTERS, 2007, 7 (11) :3499-3503

[9] Thin-film particles of graphite oxide 1: High-yield synthesis and flexibility of the particles [J].

Hirata, M ;

Gotou, T ;

Horiuchi, S ;

Fujiwara, M ;

Ohba, M .

CARBON, 2004, 42 (14) :2929-2937

[10] Efficient tandem polymer solar cells fabricated by all-solution processing [J].

Kim, Jin Young ;

Lee, Kwanghee ;

Coates, Nelson E. ;

Moses, Daniel ;

Nguyen, Thuc-Quyen ;

Dante, Mark ;

Heeger, Alan J. .

SCIENCE, 2007, 317 (5835) :222-225

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