Electron-beam chemical lithography with aliphatic self-assembled monolayers

被引：89

作者：

Ballav, Nirmalya ^{[1
]}

Schilp, Soeren ^{[1
]}

Zharnikov, Michael ^{[1
]}

机构：

[1] Heidelberg Univ, Angew Phys Chem, D-69120 Heidelberg, Germany

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2008年 / 47卷 / 08期

关键词：

electron beams; lithography; monolayers; polymer brushes; self-assembly;

D O I：

10.1002/anie.200704105

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanopatterns: The feasibility of a new lithographic technique, chemical lithography with self-assembled monolayers (SAMs) of commercially available aliphatic compounds as resist materials, is demonstrated by the fabrication of polymer nanopatterns (see image). The technique is based on an irradiation-promoted exchange reaction. Patterning requires a much lower dose than electron-beam chemical lithography with aromatic SAMs as resists. (Figure Presented) © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

引用

页码：1421 / 1424

页数：4

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