Localization effects in Kondo semimetals CeNiSn and CeRhSb

被引：58

作者：

Takabatake, T

Nakamoto, G

Yoshino, T

Fujii, H

Izawa, K

Nishigori, S

Goshima, H

Suzuki, T

Fujita, T

Maezawa, K

Hiraoka, T

Okayama, Y

Oguro, I

Menovsky, AA

Neumaier, K

Bruckl, A

Andres, K

机构：

[1] HIROSHIMA UNIV, FAC INTEGRATED ARTS & SCI, HIGASHIHIROSHIMA 739, JAPAN

[2] TOYAMA PREFECTURAL UNIV, DEPT LIBERAL ARTS & SCI, TOYAMA 93903, JAPAN

[3] SAGA UNIV, FAC SCI & ENGN, SAGA 840, JAPAN

[4] UNIV TOKYO, INST SOLID STATE PHYS, TOKYO 106, JAPAN

[5] WALTHER MEISSNER INST TIEFTEMP FORSCH, D-85748 GARCHING, GERMANY

[6] UNIV AMSTERDAM, VAN DER WAALS ZEEMAN LAB, NL-1018 XE AMSTERDAM, NETHERLANDS

来源：

PHYSICA B-CONDENSED MATTER | 1996年 / 223-24卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(96)00137-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have found that the semiconductor-like increase in resistivity previously reported on CeNiSn and CeRhSb below about 8 K is suppressed with decreasing impurity concentration in single-crystalline samples. Nevertheless, the absolute values of the Hall coefficient strongly increase as temperature decreases. Therefore, we interpret the metallic behavior found in the a-axis resistivity of a purified crystal of CeNiSn as a consequence of the significant increase of relaxation time of carriers. Even for the purified crystal, the residual gamma value is 40 mJ/K(2) mol at 0.03 K. These results suggest that the energy gap is closed along the a-axis and that residual carriers are strongly localized in the presence of impurities.

引用

页码：413 / 420

页数：8

共 25 条

[1] Tunneling measurements of the energy gap in CeRhSb and CeNiSn [J].