Optimization of plasma-enhanced chemical vapor deposition parameters for the growth of individual vertical carbon nanotubes as field emitters

被引：27

作者：

Loeffler, R. ^{[1
]}

Haeffner, M. ^{[1
]}

Visanescu, G. ^{[2
]}

Weigand, H. ^{[1
]}

Wang, X. ^{[3
]}

Zhang, D. ^{[3
]}

Fleischer, M. ^{[1
]}

Meixner, A. J. ^{[3
]}

Fortagh, J. ^{[2
]}

Kern, D. P. ^{[1
]}

机构：

[1] Univ Tubingen, Inst Appl Phys, D-72076 Tubingen, Germany

[2] Univ Tubingen, Inst Expt Phys, D-72076 Tubingen, Germany

[3] Univ Tubingen, Inst Phys & Theoret Chem, D-72076 Tubingen, Germany

来源：

CARBON | 2011年 / 49卷 / 13期

关键词：

LOW-TEMPERATURE GROWTH; EMISSION; DENSITY; ARRAYS; PECVD; FILMS; TIPS; GAS;

D O I：

10.1016/j.carbon.2011.05.055

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this article plasma enhanced growth of single vertical carbon nanotubes (CNTs) from individual nickel catalyst dots is studied, aiming at the fabrication of CNT field emitters. It is found that the growth of individual CNTs differs from that of CNT forests grown from unpatterned catalyst films, an effect that can be attributed to the difference in catalyst volumes. In the context of growth parameters the influence of temperature, growth time, catalyst volume, pressure and power is characterized. After determining the growth behavior, an individual CNT of desired geometry is fabricated on a conducting lead. The CNT is electrically characterized in terms of its field emission behavior and stable emission currents and its work function is determined to phi = 5.4 +/- 0.2 eV. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：4197 / 4203

页数：7

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