Fabrication of transparent p-n hetero-junction diodes by p-diamond film and n-ZnO film

被引：51

作者：

Wang, CX

Yang, GW

Zhang, TC

Liu, HW

Han, YH

Luo, JF

Gao, CX ^{[1
]}

Zou, GT

机构：

[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

[2] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

来源：

DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 09期

基金：

中国国家自然科学基金;

关键词：

diamond film; diode; transparent; ZnO;

D O I：

10.1016/S0925-9635(03)00237-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO/diamond hetero-junction diodes have been fabricated for the first time. The structure of the diode was n-type ZnO film/p-type diamond film on the {1111} surface of a crystalline diamond. The contact between the n- and p-type semiconductors was found to be improved. The ratio of forward current to the reverse current exceeded 120 within the range of applied voltages of -4 to +4 V. The diode possessed an optical transmission of 50-70% in 500-700 nm wavelength regions. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：1548 / 1552

页数：5

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