Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films

Praseodymium oxide-based dielectric thin films have been grown using metal-organic chemical vapor deposition (MOCVD) technique on p-and n-type Si (0 0 1) substrates. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses have revealed that depositions at 750 degrees C in 1.33 x 10(-1) Pa oxygen partial pressure have produced Pr2O3 films with a praseodymium silicate bottom layer. The influence of deposition temperature has been evaluated carrying out deposition experiments in the 450-850 degrees C range. The structural characterization of praseodymium oxide-based films has been performed using X-ray diffraction and transmission electron microscopy (TEM). Films deposited in the low deposition temperature range (450-650 degrees C) are quite amorphous and the praseodymium silicate bottom layer thickness is smaller than in the case of high temperature deposited films. In the 650-850 degrees C deposition temperature range hexagonal Pr2O3 polycrystalline films have been grown. Finally, the electrical properties of both amorphous and polycrystalline praseodymium oxide films have been investigated and compared. (c) 2004 Elsevier B.V. All rights reserved.