A monolithically integrated 1-Gb/s silicon photoreceiver

被引：13

作者：

Schow, CL ^{[1
]}

Schaub, JD ^{[1
]}

Li, R ^{[1
]}

Qi, J ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 01期

关键词：

monolithic integrated circuits; optical communications; optical receivers; optoelectronic devices; photodetectors; photodiodes; p-i-n photodiodes;

D O I：

10.1109/68.736415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a monolithically integrated optical receiver consisting of a silicon MMOS transimpedance preamplifier paired with a lateral, interdigitated p-i-n photodiode. The preamplifier achieved a bandwidth of 500 MHz, a transimpedance of 51.4 dB.Omega and dissipated only 10.8 mW of power at a power supply voltage of 1.8 V. At a bit-error rate of 10(-9) the receiver exhibited sensitivities of -22.8, -15, and -9.3 dBm at bit rates of 622 Mb/s, 900 Mb/s, and 1 Gb/s, respectively. To the best of the authors' knowledge this is the highest sensitivity at 1 Gb/s reported for a silicon monolithically integrated optical receiver.

引用

页码：120 / 121

页数：2

共 5 条

[1]

LIM PJW, IEEE ISSC 93, P96

[2] A silicon NMOS monolithically integrated optical receiver [J].