Blue radiative recombination due to hot electrons in InGaN single-quantum well LEDs

被引：1

作者：

Kudo, H ^{[1
]}

Yamada, Y ^{[1
]}

Taguchi, T ^{[1
]}

机构：

[1] Yamaguchi Univ, Dept Elect & Elect Engn, Ube, Yamaguchi 755, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

InGaN; single-quantum well (SQW); light-emitting diode (LED); hot electron; electroluminescence;

D O I：

10.1016/S0022-0248(98)00300-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have for the rst time observed the effect of hot electrons on the recombination radiation of the intense blue emission around 450 nm (about 2.76 eV) in an InGaN-based single-quantum well blue LED. The forward-biased injection electroluminescence spectrum reflects the distribution function of hot carriers injected into the active layer. Emission spectral characteristics under forward-biased high pulse-currents can be quantitatively explained by the drifted Maxwellian distribution functions of hot electrons. A maximum temperature of hot electrons was estimated to be about 400 K. which is much higher than the lattice temperature at current densities of about 5400 A/cm(2) at 77 K. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：812 / 815

页数：4

共 13 条

[1] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[2] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369

[3]

GALMONT B, 1993, J APPL PHYS, V74, P1818

[4]

Huang ZC, 1996, MATER RES SOC SYMP P, V395, P789

[5] EXPERIMENTAL AND THEORETICAL DETERMINATION OF HOT-ELECTRON DISTRIBUTION IN GAAS AND RELATED MIXED-CRYSTALS [J].

INOUE, M ;

TAKENAKA, N ;

SHIRAFUJI, J ;

INUISHI, Y .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :29-33

[6]

Nakamura S, 1996, MATER RES SOC SYMP P, V395, P879

[7] HIGH-POWER INGAN/GAN DOUBLE-HETEROSTRUCTURE VIOLET LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

MUKAI, T .

APPLIED PHYSICS LETTERS, 1993, 62 (19) :2390-2392

[8]

RIDLEY BK, 1989, QUANTUM PROCESS SEMI

[9] Femtosecond studies of carrier dynamics in InGaN [J].

Sun, CK ;

Vallee, F ;

Keller, S ;

Bowers, JE ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1997, 70 (15) :2004-2006

[10]

TAGUCHI T, 1997, P 1997 INT C SOL STA, P212

← 1 2 →