Electrochemical etching of highly conductive GaN single crystals

被引：45

作者：

Nowak, G

Xia, XH

Kelly, JJ

Weyher, JL

Porowski, S

机构：

[1] Polish Acad Sci, High Pressure Res Ctr, PL-01141 Warsaw, Poland

[2] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands

[3] Catholic Univ Nijmegen, RIM, Exp Solid State Phys, NL-6525 ED Nijmegen, Netherlands

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 222卷 / 04期

关键词：

GaN; electrochemical etching;

D O I：

10.1016/S0022-0248(00)00988-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It is shown that the (0 0 0 1) Ga-polar surface of highly doped GaN single crystals can be etched anodically in the dark in dilute aqueous KOH solution. Two etching regimes involving electron tunneling and avalanche breakdown are defined. The electrochemistry and surface morphology encountered in each regime are described. Possible applications of anodic etching are considered. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：735 / 740

页数：6

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