Resistive switching devices based on nanocrystalline solid electrolyte (AgI)0.5(AgPO3)0.5

Resistive switching devices with a sandwich structure Ag/(AgI)(0.5)(AgPO(3))(0.5)/Pt were fabricated on silicon(001) wafer by using the pulsed laser deposition method and the focused ion beam nanofabrication technique. (AgI)(0.5)(AgPO(3))(0.5) films deposited at room temperature show a nanocrystal structure and the composition of the films was identified by using x-ray photoelectron spectroscopy. The current-voltage characteristics of the Ag/(AgI)(0.5)(AgPO(3))(0.5)/Pt memory units show good switching behaviors. The ratio of the conductance between the "ON" state (high conductance) and the "off" state (low conductance) reaches 1x10(6). The ON and OFF states can be effectively written, read, and erased up to 4x10(5) scanning cycles by using a set of voltage pulses with an amplitude less than 3 V. It also could be observed that the time for the writing and erasing operations could be less than 150 ns. The switching mechanism of the Ag/(AgI)(0.5)(AgPO(3))(0.5)/Pt memory devices was ascribed to the possible formation and dissolution of Ag filaments in (AgI)(0.5)(AgPO(3))(0.5) films induced by the applied electrical pulses with different polarities. (c) 2007 American Institute of Physics.