Transmission electron microscopy and Raman measurements of the misfit stress in a Si tensile strained layer

A tensile-strained Si layer grown on a Si0.8Ge0.2 pseudo substrate with a nominal lattice mismatch of -0.76% has been studied by transmission electron microscopy using a curvature method and Raman scattering in order to determine experimentally the in-plane component of the epitaxial stress. The stress is obtained by measuring the curvature and the thickness on different areas of a thinned sample. Experimental values of the stress given by the two methods are in good agreement and are close to the nominal one. (C) 2004 American Institute of Physics.