Surface phonon observed in GaAs wire crystals grown on porous Si

被引：18

作者：

da Silva, SW ^{[1
]}

Galzerani, JC

Lubyshev, DI

Basmaji, P

机构：

[1] Univ Brasilia, Inst Fis, BR-70910900 Brasilia, DF, Brazil

[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Paulo, Brazil

[3] Univ Sao Paulo, Inst Fis, BR-13560970 Sao Paulo, Brazil

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 43期

关键词：

D O I：

10.1088/0953-8984/10/43/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

GaAs epitaxially grown on porous Si (PS) showed the presence of wires with typical diameters of 60 nm, and lengths in the range 6-10 mu m. The Raman spectra of these samples were studied, and we focused attention on two additional modes appearing as 'shoulders' to the LO and TO GaAs lines. The former could be assigned to a surface phonon, and the latter to the presence of As clusters.

引用

页码：9687 / 9690

页数：4

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