STUDIES OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS ON POROUS SI SUBSTRATES

被引：21

作者：

MII, YJ

LIN, TL

KAO, YC

WU, BJ

WANG, KL

NIEH, CW

JAMIESON, DN

LIU, JK

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

[2] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：696 / 698

页数：3

共 8 条

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FISCHER, R ;

NEUMAN, D ;

ZABEL, H ;

MORKOC, H ;

CHOI, C ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1986, 48 (18) :1223-1225

[2]

GRUNTHANER PJ, IN PRESS

[3]

Kao Y. C., 1987, Heteroepitaxy on Silicon II. Symposium, P473

[4] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[5]

Lin T. L., 1987, Heteroepitaxy on Silicon II. Symposium, P113

[6] 100-MUM-WIDE SILICON-ON-INSULATOR STRUCTURES BY SI MOLECULAR-BEAM EPITAXY GROWTH ON POROUS SILICON [J].

LIN, TL ;

CHEN, SC ;

KAO, YC ;

WANG, KL ;

IYER, S .

APPLIED PHYSICS LETTERS, 1986, 48 (26) :1793-1795

[7] NEW APPROACH TO THE HIGH-QUALITY EPITAXIAL-GROWTH OF LATTICE-MISMATCHED MATERIALS [J].

LURYI, S ;

SUHIR, E .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :140-142

[8] STRUCTURE OF POROUS SILICON LAYER AND HEAT-TREATMENT EFFECT [J].

UNAGAMI, T ;

SEKI, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) :1339-1344

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