Temperature dependence of the thermal expansion of GaN

被引：106

作者：

Roder, C ^{[1
]}

Einfeldt, S ^{[1
]}

Figge, S ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.72.085218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal expansion of hexagonal GaN bulk crystals was studied in an extended temperature range from 12 to 1025 K. The lattice parameters a and c were measured by high-resolution x-ray diffraction. The temperature dependence of the derived thermal expansion coefficients along the a and c directions could be well described over the entire temperature range within both the Debye model and the Einstein model. Debye temperatures of (868 +/- 20) K and (898 +/- 24) K and Einstein temperatures of (636 +/- 13) K and (662 +/- 18) K were derived along the a and c axes, respectively, and compared to available literature values.

引用

页数：6

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