Raman studies of monolayer graphene: The substrate effect

被引:659
作者
Wang, Ying Ying
Ni, Zhen Hua
Yu, Ting
Shen, Ze Xiang [1 ]
Wang, Hao Min [2 ]
Wu, Yi Hong [2 ]
Chen, Wei [3 ]
Wee, Andrew Thye Shen [3 ]
机构
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[3] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
关键词
D O I
10.1021/jp8008404
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Graphene has attracted a lot of interest for fundamental studies as well as for potential applications. Till now, micromechanical cleavage (MC) of graphite has been used to produce high-quality graphene sheets on different substrates. Clear understanding of the substrate effect is important for the potential device fabrication of graphene. Here we report the results of the Raman studies of micromechanically cleaved monolayer graphene on standard SiO2 (300 nm)/Si, single crystal quartz, Si, glass, polydimethylsiloxane (PDMS), and NiFe. Our data suggests that the Raman features of monolayer graphene are independent of the substrate used; in other words, the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by MC. On the other hand, epitaxial monolayer graphene (EMG) on SiC substrate is also investigated. Significant blueshift of Raman bands is observed, which is attributed to the interaction of the graphene sheet with the substrate, resulting in the change of lattice constant and also the electronic structure.
引用
收藏
页码:10637 / 10640
页数:4
相关论文
共 28 条
[1]   Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].
Berger, C ;
Song, ZM ;
Li, TB ;
Li, XB ;
Ogbazghi, AY ;
Feng, R ;
Dai, ZT ;
Marchenkov, AN ;
Conrad, EH ;
First, PN ;
de Heer, WA .
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (52) :19912-19916
[2]   Electronic confinement and coherence in patterned epitaxial graphene [J].
Berger, Claire ;
Song, Zhimin ;
Li, Xuebin ;
Wu, Xiaosong ;
Brown, Nate ;
Naud, Cecile ;
Mayou, Didier ;
Li, Tianbo ;
Hass, Joanna ;
Marchenkov, Atexei N. ;
Conrad, Edward H. ;
First, Phillip N. ;
de Heer, Wait A. .
SCIENCE, 2006, 312 (5777) :1191-1196
[3]   The effect of substrates on the Raman spectrum of graphene: Graphene-on-sapphire and graphene-on-glass [J].
Calizo, Irene ;
Bao, Wenzhong ;
Miao, Feng ;
Lau, Chun Ning ;
Balandin, Alexander A. .
APPLIED PHYSICS LETTERS, 2007, 91 (20)
[4]   Raman fingerprint of charged impurities in graphene [J].
Casiraghi, C. ;
Pisana, S. ;
Novoselov, K. S. ;
Geim, A. K. ;
Ferrari, A. C. .
APPLIED PHYSICS LETTERS, 2007, 91 (23)
[5]   Rayleigh imaging of graphene and graphene layers [J].
Casiraghi, C. ;
Hartschuh, A. ;
Lidorikis, E. ;
Qian, H. ;
Harutyunyan, H. ;
Gokus, T. ;
Novoselov, K. S. ;
Ferrari, A. C. .
NANO LETTERS, 2007, 7 (09) :2711-2717
[6]   Atomic structure of the 6H-SiC(0001) nanomesh [J].
Chen, W ;
Xu, H ;
Liu, L ;
Gao, XY ;
Qi, DC ;
Peng, GW ;
Tan, SC ;
Feng, YP ;
Loh, KP ;
Wee, ATS .
SURFACE SCIENCE, 2005, 596 (1-3) :176-186
[7]   Surface transfer p-type doping of epitaxial graphene [J].
Chen, Wei ;
Chen, Shi ;
Qi, Dong Chen ;
Gao, Xing Yu ;
Wee, Andrew Thye Shen .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (34) :10418-10422
[8]   Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].
Das, A. ;
Pisana, S. ;
Chakraborty, B. ;
Piscanec, S. ;
Saha, S. K. ;
Waghmare, U. V. ;
Novoselov, K. S. ;
Krishnamurthy, H. R. ;
Geim, A. K. ;
Ferrari, A. C. ;
Sood, A. K. .
NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215
[9]  
DAS A, ARXIV07104160
[10]   Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study [J].
Emtsev, K. V. ;
Speck, F. ;
Seyller, Th. ;
Ley, L. ;
Riley, J. D. .
PHYSICAL REVIEW B, 2008, 77 (15)