Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes

被引：131

作者：

Arif, Ronald A. ^{[1
]}

Zhao, Hongping ^{[1
]}

Ee, Yik-Khoon ^{[1
]}

Tansu, Nelson ^{[1
]}

机构：

[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2008年 / 44卷 / 5-6期

基金：

美国国家科学基金会;

关键词：

gain media; III-nitride; InGaN quantum wells (QWs); light-emitting diodes (LEDs); polarization field engineering;

D O I：

10.1109/JQE.2008.918309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel gain media based on staggered InGaN quantum wells (QWs) grown by metal-organic chemical vapor deposition was demonstrated as improved active region for visible light emitters. Fermi's golden rule indicates that InGaN QW with step-function like In content in the well leads to significantly improved radiative recombination rate and-optical gain due to increased electron-hole wavefunction overlap, in comparison to that of conventional InGaN QW. Spontaneous emission spectra of both conventional and staggered InGaN QW were calculated based on energy dispersion and transition matrix element obtained by 6-band k.p formalism for wurtzite semiconductor, taking into account valence-band-states mixing, strain effects, and polarization-induced electric fields. The calculated spectra for the staggered InGaN QW showed enhancement of radiative recombination rate, which is in good agreement with photoluminescence and cathodoluminescence measurements at emission wavelength regime of 425 and 500 nm. Experimental results of light-emitting diode (LED) structures utilizing staggered InGaN QW also show significant improvement in output power. Staggered InGaN QW allows polarization engineering leading to improved luminescence intensity and LED output power as a result of enhanced radiative recombination rate.

引用

页码：573 / 580

页数：8

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