Magnetotransport properties of new III-V-based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlattices

被引：5

作者：

Hayashi, T

Tanaka, M

Seto, K

Nishinaga, T

Shimada, H

Hayashi, H

Niihara, K

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 113, Japan

[2] Univ Tokyo, Cryogen Ctr, Bunkyo Ku, Tokyo 113, Japan

[3] Res & Dev Corp Japan, PRESTO, Toyota, Japan

[4] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

关键词：

(Ga; Mn)As; magnetic semiconductor superlattices; extraordinary Hall effect;

D O I：

10.1016/S1386-9477(98)00083-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new class of III-V-based magnetic(GaMnAs)/nonmagnetic(AlAs) semiconductor superlattices (SLs) has been successfully grown by low-temperature molecular beam epitaxy. Cross-sectional transmission electron microscopy and X-ray diffraction measurements show that the SLs are formed as intended with abrupt interfaces. Magnetization and magnetotransport measurements have revealed that the SLs having relatively wide (Ga,Mn)As layers (greater than or equal to 70 Angstrom) are ferromagnetic at low temperature, and the hole concentration and Curie temperature are estimated. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：404 / 407

页数：4

共 7 条

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