Observation of Rabi splitting in a bulk GaN microcavity grown on silicon

被引：70

作者：

Antoine-Vincent, N ^{[1
]}

Natali, F

Byrne, D

Vasson, A

Disseix, P

Leymarie, J

Leroux, M

Semond, F

Massies, J

机构：

[1] Univ Clermont Ferrand, LASMEA UMR UBP CNRS 6602, F-63177 Aubiere, France

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.68.153313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the experimental observation of the strong-coupling regime in a nitride-based microcavity. The active layer in the optical cavity consists of a lambda/2 GaN layer sandwiched between a dielectric mirror and the silicon substrate, which acts as the bottom mirror. Reflectivity measurements have been performed under various angles of incidence at T=5 K, producing evidence of strong-coupling behavior between the exciton and the cavity mode. A Rabi splitting of 31 meV is obtained experimentally. Transfer-matrix simulations have allowed us to account for the exciton-photon interaction. From these calculations, the oscillator strengths of the A and B excitons are evaluated and these values are in good agreement with those previously determined in bulk GaN.

引用

页数：4

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