Ion beam modification for submicron technology

被引：7

作者：

Kalbitzer, S

Wilbertz, C

Miller, T

Knoblauch, A

机构：

[1] Max-Planck-Inst. für Kernphysik, D-69029 Heidelberg

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 113卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01321-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Finely focused ion beams with target-current densities of about 100 A/cm(2) are a promising tool for material modification in the nanometer range. A brief outline of the basic source developments will be given as well as some typical examples of nanostructuring of materials.

引用

页码：154 / 160

页数：7

共 27 条

[1] MASKLESS WRITING OF SUBMICROMETER GRATINGS IN FUSED-SILICA BY FOCUSED ION-BEAM IMPLANTATION AND DIFFERENTIAL WET ETCHING
ALBERT, J
HILL, KO
MALO, B
JOHNSON, DC
BILODEAU, F
TEMPLETON, IM
BREBNER, JL
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (17) : 2309 - 2311
[2] ANDERSEN HH, 1981, TOPICS APPL PHYS, V47
[3] T-DYN MONTE-CARLO SIMULATIONS APPLIED TO ION ASSISTED THIN-FILM PROCESSES
BIERSACK, JP
BERG, S
NENDER, C
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 21 - 27
[4] LONG-TIME CURRENT STABILITY OF A GAS-FIELD ION-SOURCE WITH A SUPERTIP
BORRET, R
JOUSTEN, K
BOHRINGER, K
KALBITZER, S
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1988, 21 (12) : 1835 - 1837
[5] CURRENT VOLTAGE CHARACTERISTICS OF A GAS-FIELD ION-SOURCE WITH A SUPERTIP
BORRET, R
BOHRINGER, K
KALBITZER, S
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1990, 23 (10) : 1271 - 1277
[6] OPTICAL-PROPERTIES OF SIC FOR CRYSTALLINE AMORPHOUS PATTERN FABRICATION
DERST, G
WILBERTZ, C
BHATIA, KL
KRATSCHMER, W
KALBITZER, S
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (18) : 1722 - 1724
[7] ALGAAS/INGAAS/GAAS SINGLE-ELECTRON TRANSISTORS FABRICATED BY GA FOCUSED ION-BEAM IMPLANTATION
FUJISAWA, T
HIRAYAMA, Y
TARUCHA, S
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (17) : 2250 - 2252
[8] BROAD-PULSED GA ION-BEAM-ASSISTED ETCHING OF SI WITH CL2
HARAICHI, S
KOMURO, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B): : 6168 - 6172
[9] N-TYPE AND P-TYPE INPLANE GATED FIELD-EFFECT TRANSISTORS DIRECTLY WRITTEN ON A SEMIINSULATING GAAS SUBSTRATE
HIRAYAMA, Y
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (14) : 1667 - 1669
[10] FOCUSED ION-BEAM LITHOGRAPHY
HUH, JS
SHEPARD, MI
MELNGAILIS, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (01): : 173 - 175

← 1 2 3 →