Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides

被引：132

作者：

Fleetwood, DM ^{[1
]}

Riewe, LC ^{[1
]}

Schwank, JR ^{[1
]}

Witczak, SC ^{[1
]}

Schrimpf, RD ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT ELECT & COMP ENGN,TUCSON,AZ 85721

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期

关键词：

D O I：

10.1109/23.556834

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have performed thermally-stimulated-current (TSC) and capacitance-voltage measurements on 370-1080 nm thermal, SIMOX, and bipolar-base oxides as functions of bias, dose rate, and temperature during irradiation. Base oxides built in a development version of Analog Devices' RF25 process show much more interface-trap buildup than XFCB oxides. Both net-oxide-trap and interface-trap charge densities for RF25 capacitors are enhanced significantly during low-dose-rate or high-temperature irradiation at 0 V over high-rate, 25 degrees C exposures. TSC measurements show the increase in net-oxide-trap charge density is due to a decrease in trapped electron density with decreasing dose rate or increasing irradiation temperature (at least to 125 degrees C), and not by increased trapped hole density. Similar enhancement of net-oxide-trap and interface-trap charge density with decreasing dose rate is found for soft thermal oxides irradiated at 0 V, but not 5 V. These results strongly suggest that space charge effects associated with holes metastably trapped in the bulk of the oxide can cause the enhanced bipolar gain degradation seen at low dose rates and/or high temperatures in many technologies. No enhanced radiation-induced charge trapping is observed for low-dose-rate or high-temperature, 0 V irradiation of SIMOX capacitors. Implications for hardness assurance tests are discussed.

引用

页码：2537 / 2546

页数：10

共 52 条

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