Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction

被引:83
作者
Li, L [1 ]
Han, BK [1 ]
Fu, Q [1 ]
Hicks, RF [1 ]
机构
[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
关键词
D O I
10.1103/PhysRevLett.82.1879
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
An InP(001)-(2 x 1) reconstruction was prepared by metal-organic vapor-phase epitaxy. Scanning tunneling micrographs and infrared spectra of adsorbed hydrogen revealed that the (2 x 1) is terminated with a complete layer of buckled phosphorous dimers, giving rise to p(2 x 2) and c(4 x 2) domains. A surface band gap of 1.2 +/- 0.2 eV was measured by scanning tunneling spectroscopy. The buckling can be explained by electron correlation among the dangling bonds of pairs of phosphorous dimers. This allows the surface to achieve a lower energy, semiconducting state. This reconstruction mimics the Si(100)-(2 x 1), which is terminated with buckled silicon dimers. [S0031-9007(99)08534-8].
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收藏
页码:1879 / 1882
页数:4
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