Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction

被引：83

作者：

Li, L ^{[1
]}

Han, BK ^{[1
]}

Fu, Q ^{[1
]}

Hicks, RF ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.82.1879

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An InP(001)-(2 x 1) reconstruction was prepared by metal-organic vapor-phase epitaxy. Scanning tunneling micrographs and infrared spectra of adsorbed hydrogen revealed that the (2 x 1) is terminated with a complete layer of buckled phosphorous dimers, giving rise to p(2 x 2) and c(4 x 2) domains. A surface band gap of 1.2 +/- 0.2 eV was measured by scanning tunneling spectroscopy. The buckling can be explained by electron correlation among the dangling bonds of pairs of phosphorous dimers. This allows the surface to achieve a lower energy, semiconducting state. This reconstruction mimics the Si(100)-(2 x 1), which is terminated with buckled silicon dimers. [S0031-9007(99)08534-8].

引用

页码：1879 / 1882

页数：4

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