Structure and composition of the c(4 x 4) reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy

被引：19

作者：

Han, BK ^{[1
]}

Li, L ^{[1
]}

Fu, Q ^{[1
]}

Hicks, RF ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 25期

关键词：

D O I：

10.1063/1.121599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surfaces of GaAs (001) were prepared by metalorganic vapor-phase epitaxy and characterized by scanning tunneling microscopy, x-ray photoelectron spectroscopy, infrared spectroscopy, and low-energy electron diffraction. Upon removal from the reactor, the gallium arsenide surface exhibits a (1 x 2) reconstruction, which is a disordered variant of the c(4 x 4). The disorder arises from the presence of adsorbed alkyl groups. Heating the sample to 350 degrees C desorbs the hydrocarbons and produces a well-ordered c(4x4) structure. A model is proposed for the alkyl-terminated (1 x 2) reconstruction. (C) 1998 American Institute of Physics. [S0003-6951(98)04125-4].

引用

页码：3347 / 3349

页数：3

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