Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources

Thin films of In(x)Ga(1-x)As (0<x<0.012) on GaAs (001) were grown by metalorganic vapor phase epitaxy using triisopropylindium, triisobutylgallium, and tertiarybutylarsine. The effect of the process conditions, temperature, and V/III ratio on the film quality was studied using high resolution x-ray diffraction, scanning tunneling microscopy, and Hall measurements. High quality films were grown at temperatures as low as 475 degrees C and at a V/III ratio of 100. However, under these conditions, a change in growth mode from step flow to two-dimensional nucleation was observed.