STRUCTURE OF (001) GAAS-SURFACES DURING EPITAXIAL-GROWTH BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION

被引：13

作者：

KAMIYA, I

TANAKA, H

ASPNES, DE

KOZA, M

BHAT, R

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

[3] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 23期

关键词：

D O I：

10.1063/1.110200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Under typical atmospheric pressure (AP) organometallic chemical vapor deposition (OMCVD) growth conditions with trimethylgallium (TMG) and arsine sources, reflectance-difference (RD) spectra show that the (001) GaAs surface is in the d(4 X 4)-like state. With sufficiently high TMG and low AsH3 exposures, we observe RD spectra similar to those obtained during atomic layer epitaxy (ALE) at lower temperatures.

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收藏

页码：3206 / 3208

页数：3

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